Tunneling magnetoresistance TMR in Ga0.92Mn0.08As/Al–O/Co40Fe40B20 trilayer hybrid structure as a function of temperature from 10 to 50 K with magnetic field H 2000 Oe has been studied. TMR ratio of 1.6% at low fields at 10 K was achieved with the applied current of 1 A. The behavior of junction resistance was well explained by the tunneling resistance across the barrier. Strong bias dependences of magnetoresistance and junction resistance were presented. © 2009 American Institute of Physics.
Du, G. X.; Babu, M. Ramesh; Han, X. F.; Deng, J. J.; Wang, W. Z.; Zhao, J. H.; Wang, W. D.; and Tang, Jinke (2009). "Tunneling magnetoresistance in (Ga,Mn)As/Al–O/CoFeB hybrid structures." JOURNAL OF APPLIED PHYSICS .105, 07C707-1-07C707-3.