Document Type

Article

Publication Date

2-23-2009

Abstract

Tunneling magnetoresistance TMR in Ga0.92Mn0.08As/Al–O/Co40Fe40B20 trilayer hybrid structure as a function of temperature from 10 to 50 K with magnetic field H 2000 Oe has been studied. TMR ratio of 1.6% at low fields at 10 K was achieved with the applied current of 1 A. The behavior of junction resistance was well explained by the tunneling resistance across the barrier. Strong bias dependences of magnetoresistance and junction resistance were presented. © 2009 American Institute of Physics.

DOI

10.1063/1.3068418

Comments

Copyright 2009 AIP (American Institute of Physics) Publishing LLC.

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