Document Type

Article

Publication Date

9-26-2007

Abstract

Gd-doped HfO2 films deposited on silicon substrates undergo a crystallographic change from monoclinic to fluorite cubic phase with increasing Gd concentrations. The crystallographic phase change is accompanied by a small increase in the valence bandwidth and in the apparent band offset in the surface region. Electrical measurements show pronounced rectification properties for lightly doped Gd:HfO2 films on p-Si and for heavily-doped Gd:HfO2 films on n-Si, suggesting a crossover from n-type to p-type behavior with increasing doping level. © 2007 American Institute of Physics.

DOI

10.1063/1.2787967

Comments

Copyright 2007 AIP (American Institute of Physics) Publishing LLC.

Share

COinS