In this paper, we report the transport properties of Cr-doped Ti2O3 thin films. The thin films were grown on a-Al2O3 s012d substrates by pulsed-laser deposition. X-ray diffraction and transmission electron microscopy results show that the films are single corundum phase. All of sCrxTi1−xd2O3 show semiconducting behavior. Without doping, pure Ti2O3 thin films show positive magnetoresistance sMRd of 23% at 2 K. The MR behavior changed dramatically after doping with Cr. Sample sCr0.1Ti0.9d2O3 shows MR=−360% at 2 K. All of the Cr-doped films are ferromagnetic up to room temperature. © 2005 American Institute of Physics.
Wang, Zhenjun; Tang, Jinke; and Spinu, Leonard (2005). "Transport properties in chromium-doped Ti 2 O 3 thin films." JOURNAL OF APPLIED PHYSICS .97, 10D319-1-10D319-3.