The origin of anomalous negative magnetoresistance and its temperature dependence in polycrystalline Ni–Mn–Ga films prepared by pulse laser deposition was studied. The investigation of structural, transports, magnetic, and ferromagnetic resonance properties of the films suggests contributions of different mechanisms in magnetotransport. At low magnetic fields the main contribution to magnetoresistance is due to the transport between the areas with different orientation of magnetic moments, while at high fields it is an electron scattering of in spin-disordered areas. © 2004 American Institute of Physics.
Golub, Vladimir O.; Vovk, Andriy Ya.; Malkinski, Leszek; O’Connor, Charles J.; Wang, Zhenjun; and Tang, Jinke (2004). "Anomalous magnetoresistance in NiMnGa thin films." JOURNAL OF APPLIED PHYSICS 96.7, 3865-3869.